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Ultra-high mobility electron gas can increase information transfer speed &data storage density in quantum devices

Newdelhi:12/1/21:Scientists have produced electron gas with ultra-high mobility, which can speed up the transfer of quantum information and signal from one part of a device to another and increase data storage and memory.

The need for attaining new functionalities in modern electronic devices has led to the manipulation of the property of an electron called spin degree of freedom along with its charge. This has given rise to an altogether new field of spin-electronics or ‘spintronics’. It has been realized that a phenomenon called the ‘Rashba effect’, which consists of the splitting of spin-bands in an electronic system, might play a key role in spintronic devices.

Scientists at the Institute of Nano Science and Technology (INST), Mohali (Punjab), an autonomous institution of the Department of Science and Technology (DST), the Government of India, have produced an ultra-high mobility 2d-electron gas(2DEG) at the interface of two insulating oxide layers.

Due to the high mobility of the electron gas, electrons do not collide inside the medium for a long distance and hence do not lose the memory and informationHence, such a system can easily remember and transfer its memory for a long time and distance. In addition, since they collide less during their flow, their resistance is very low, and hence they don’t dissipate energy as heat. So, such devices do not heat up easily and need less input energy to operate.

Aided by a grant from the DST-Nanomission in the form of a sophisticated, custom-made instrument called a combinatorial pulsed laser deposition setup, Dr.SuvankarChakraverty Associate Professor at Institute of Nano Science and Technology (INST), Mohali (Punjab), has produced 2DEG with ultra mobility at the novel interface composed of chemicals EuO and KTaO3. The strong spin-orbit coupling and relativistic nature of the electrons in the 2DEG resulted in the ‘Rashba field’. The research was published in the journal ‘Advanced Quantum Technologies’.

According to the INST team, realization of large Rashba-effect at such oxide interfaces containing highly mobile electron gas may open up a new field of device physics, especially in the field of quantum technology applicable for next-generation data storage media and quantum computers.

About Editor in chief

Ashok Palit has completed his graduation from Upendranath College Soro, Balasore and post graduation from Utkal University in Odia Language and literture.. He has also carved out a niche for himself as a scribe of eminence after joining the profession in 1988. He is also an independent media production professional. He brings loads of experience to Advanced Media, Ashok Palit as a cineaste has been active in film criticism for over three decades. As a film society activist, he soared to eminence for his profound commitment to the art film appreciation and aesthetics of cinema. His mode of discourse is often erudite but always lucid and comprehensible marked by a perfect acumen so rare in the field. A film aesthete with an immense fond of critical sensibilities, he wrote about growth and development of odia cinema in New Indian Express, The Times of India, The Hindustan Times, The Asian Age and Screen. He has been working as an Editor for Cine Samaya from 2002-2004.. He had made solid contribution on cinema in many odia Dailies and weekly such as Samaj, Prajatantra, Dharatri, Samaya, Satabadi, and weekly Samaya.

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